ASAP streamlines simulations to accelerate the design and qualification of electronic materials. It offers several specialised capabilities to bridge the gap between material properties and real-world performance:
- Electronic Property Prediction: Precisely calculate Band Structures, Density of States (DOS), and Energy Gaps to determine a material’s fundamental ability to conduct or insulate.
- Transport Modelling: Predict electronic transport at the nanoscale, including the generation of current-voltage (I-V) curves and transmission spectra.
- Dopant and Defect Analysis: Assess how impurities, vacancies, or intentional doping influence the electronic performance and stability of a material.
- Interface and Surface Properties: Analyse critical interfaces and surface behaviours essential for next-generation solar cells and advanced electronic components.
Here are a few examples of how ASAP is applied to solve specific challenges in modern electronics:
- Modelling I-V Characteristics of FTJ (Ferroelectric Tunnel Junctions):
Potential application in the field of information storage and processing, in particular for in-memory and neuromorphic computing architectures - The hBN Story: A Quantum Material
Investigates hexagonal Boron Nitride, a critical wide-bandgap material used as a dielectric or substrate in 2D electronics and van der Waals heterostructures. - Tuning Electronic and Magnetic Properties of TMDCs (Transition Metal Dichalcogenides):
Focuses on 2D semiconductors, which are primary candidates for transistor channels and flexible electronics.
Request your 30-day ASAP trial or Consult our experts about your electronic material challenges.